RFD10P03LSM

onsemi

RFD10P03LSM

Analog & Power

MOSFET P-CH 30V 10A TO252-3

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs200mOhm @ 10A, 5V
Base Product NumberRFD10
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1035 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)

Mechanical

PackageTube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA