PCP1302-TD-H

onsemi

PCP1302-TD-H

Analog & Power

MOSFET P-CH 60V 3A SOT89/PCP-1

ObsoleteTO-243AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs266mOhm @ 1.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds262 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.6V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Max Power Dissipation3.5W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-243AA
Supplier Device PackageSOT-89/PCP-1

Environmental

Operating Temperature150°C (TJ)