NXH040F120MNF1PG

onsemi

NXH040F120MNF1PG

Datasheet

Analog & Power

SIC 4N-CH 1200V 30A 22PIM

ActiveModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs56mOhm @ 25A, 20V
Base Product NumberNXH040
Configuration4 N-Channel
Gate Charge (Qg) (Max) @ Vgs122.1nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds1505pF @ 800V
Manufactureronsemi
Mounting TypeChassis Mount
Product StatusActive
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id4.3V @ 10mA

Electrical

Drain-to-Source Voltage1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Power - Max74W (Tj)

Mechanical

PackageTray
Package / CaseModule
Supplier Device Package22-PIM (33.8x42.5)

Environmental

Operating Temperature-40°C ~ 175°C (TJ)