NXH020F120MNF1PTG

onsemi

NXH020F120MNF1PTG

Datasheet

Analog & Power

SIC 4N-CH 1200V 51A 22PIM

ActiveModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 50A, 20V
Base Product NumberNXH020
Configuration4 N-Channel (Full Bridge)
Gate Charge (Qg) (Max) @ Vgs213.5nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds2420pF @ 800V
Manufactureronsemi
Mounting TypeChassis Mount
Product StatusActive
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id4.3V @ 20mA

Electrical

Drain-to-Source Voltage1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C51A (Tc)
Power - Max119W (Tj)

Mechanical

PackageTray
Package / CaseModule
Supplier Device Package22-PIM (33.8x42.5)

Environmental

Operating Temperature-40°C ~ 175°C (TJ)