NXH010P120MNF1PG

onsemi

NXH010P120MNF1PG

Datasheet

Analog & Power

SIC 2N-CH 1200V 114A

ActiveModuleAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 100A, 20V
Base Product NumberNXH010
Configuration2 N-Channel (Dual) Common Source
Gate Charge (Qg) (Max) @ Vgs454nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds4707pF @ 800V
Manufactureronsemi
Mounting TypeChassis Mount
Product StatusActive
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id4.3V @ 40mA

Electrical

Drain-to-Source Voltage1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C114A (Tc)
Power - Max250W (Tj)

Mechanical

PackageTray
Package / CaseModule

Environmental

Operating Temperature-40°C ~ 150°C (TJ)