NVTFWS016N06CTAG

onsemi

NVTFWS016N06CTAG

Analog & Power

MOSFET N-CH 60V 8A/32A 8WDFN

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16.3mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds489 pF @ 30 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 25µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8A (Ta), 32A (Tc)
Max Power Dissipation2.5W (Ta), 36W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-WDFN (3.3x3.3)

Environmental

Operating Temperature-55°C~175°C(TJ)