NVTFS4C08NTAG

onsemi

NVTFS4C08NTAG

Datasheet

Analog & Power

MOSFET N-CH 30V 17A 8WDFN

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.9mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1113 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C17A (Ta)
Max Power Dissipation3.1W (Ta), 31W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-WDFN (3.3x3.3)

Environmental

Operating Temperature-55°C~175°C(TJ)