NVMYS3D3N06CLTWG

onsemi

NVMYS3D3N06CLTWG

Datasheet

Analog & Power

MOSFET N-CH 60V 26A/133A 4LFPAK

ActiveSOT-1023, 4-LFPAKAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2880 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C26A (Ta), 133A (Tc)
Max Power Dissipation3.9W (Ta), 100W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-1023, 4-LFPAK
Supplier Device PackageLFPAK4 (5x6)

Environmental

Operating Temperature-55°C~175°C(TJ)