NVMYS1D3N04CTWG

onsemi

NVMYS1D3N04CTWG

Datasheet

Analog & Power

TRENCH 6 40V SL NFET

ActiveSOT-1023, 4-LFPAKAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.15mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4855 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 180µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C43A (Ta), 252A (Tc)
Max Power Dissipation3.9W (Ta), 134W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-1023, 4-LFPAK
Supplier Device PackageLFPAK4 (5x6)

Environmental

Operating Temperature-55°C~175°C(TJ)