NVMTS4D3N15MC

onsemi

NVMTS4D3N15MC

Datasheet

Analog & Power

SINGLE N-CHANNEL POWER MOSFET 00

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.45mOhm @ 95A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6514 pF @ 75 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 521µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 165A (Tc)
Max Power Dissipation5W (Ta), 292W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101