NVMTS0D4N04CTXG

onsemi

NVMTS0D4N04CTXG

Datasheet

Analog & Power

MOSFET N-CH 40V 79.8A/558A 8DFNW

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.45mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds16500 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C79.8A (Ta), 558A (Tc)
Max Power Dissipation5W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101