NVMS5P02R2G

onsemi

NVMS5P02R2G

Datasheet

Analog & Power

MOSFET P-CH 20V 3.95A 8SOIC

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs33mOhm @ 5.4A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 16 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.25V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C3.95A (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 150°C (TJ)
QualificationAEC-Q101