NVMJS2D5N06CLTWG

onsemi

NVMJS2D5N06CLTWG

Datasheet

Analog & Power

MOSFET N-CH 60V 31A/164A 8LFPAK

ActiveSOT-1205, 8-LFPAK56Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.4mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 135µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C31A (Ta), 164A (Tc)
Max Power Dissipation3.9W (Ta), 113W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-1205, 8-LFPAK56
Supplier Device Package8-LFPAK

Environmental

Operating Temperature-55°C~175°C(TJ)