NVMFWS0D7N04XMT1G

onsemi

NVMFWS0D7N04XMT1G

Datasheet

Analog & Power

40V T10M IN S08FL PACKAGE

Active8-PowerTDFN, 5 LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.7mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs74.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4657 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 180µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C331A (Tc)
Max Power Dissipation134W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFNW (4.9x5.9) (8-SOFL-WF)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)