NVMFWS0D4N04XMT1G

onsemi

NVMFWS0D4N04XMT1G

Datasheet

Analog & Power

40V T10M IN S08FL GEN 2 PACKAGE

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.42mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8550 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 330µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C519A (Tc)
Max Power Dissipation197W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device Package8-DFN (5x6)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)