NVMFWS021N10MCLT1G

onsemi

NVMFWS021N10MCLT1G

Datasheet

Analog & Power

PTNG 100V LL SO8FL

Active8-PowerTDFN, 5 LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs23mOhm @ 7A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 50 V
Manufactureronsemi
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 42µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8.4A (Ta), 31A (Tc)
Max Power Dissipation3.6W (Ta), 49W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFNW (4.9x5.9) (8-SOFL-WF)

Environmental

Operating Temperature-55°C~175°C(TJ)