NVMFWS003P03P8ZT1G

onsemi

NVMFWS003P03P8ZT1G

Datasheet

Analog & Power

PFET SO8FL -30V 3MO

Active8-PowerTDFN, 5 LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.8mOhm @ 23A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds12120 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C35.7A (Ta), 234A (Tc)
Max Power Dissipation3.9W (Ta), 168.7W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFNW (4.9x5.9) (8-SOFL-WF)

Environmental

Operating Temperature-55°C~175°C(TJ)