NVMFS6H858NWFT1G

onsemi

NVMFS6H858NWFT1G

Datasheet

Analog & Power

MOSFET N-CH 80V 8.4A/29A 5DFN

Active8-PowerTDFN, 5 LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20.7mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 40 V
Manufactureronsemi
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 30µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8.4A (Ta), 29A (Tc)
Max Power Dissipation3.5W (Ta), 42W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101