NVMFS6B85NLT3G

onsemi

NVMFS6B85NLT3G

Datasheet

Analog & Power

MOSFET N-CH 100V 5.6A/19A 5DFN

Obsolete8-PowerTDFN, 5 LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs46mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds480 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5.6A (Ta), 19A (Tc)
Max Power Dissipation3.5W (Ta), 42W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFN (5x6) (8-SOFL)

Environmental

Operating Temperature-55°C~175°C(TJ)