NVMFD6H852NLT1G

onsemi

NVMFD6H852NLT1G

Datasheet

Analog & Power

MOSFET N-CH 80V 7A/25A 8DFN DL

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25.5mOhm @ 10A, 10V
Base Product NumberNVMFD6
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds521 pF @ 40 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 26µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 25A (Tc)
Max Power Dissipation3.2W (Ta), 38W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)

Environmental

Operating Temperature-55°C~175°C(TJ)