NVMFD5C650NLT1G

onsemi

NVMFD5C650NLT1G

Datasheet

Analog & Power

MOSFET 2N-CH 60V 21A/111A 8DFN

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds2546pF @ 25V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 98µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 111A (Tc)
Power - Max3.5W (Ta), 125W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101