NVF3055L108T3G

onsemi

NVF3055L108T3G

Datasheet

Analog & Power

MOSFET N-CH 60V 3A SOT223

ObsoleteTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs120mOhm @ 1.5A, 5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223 (TO-261)

Environmental

Operating Temperature-55°C~175°C(TJ)