NVD5C688NLT4G

onsemi

NVD5C688NLT4G

Datasheet

Analog & Power

MOSFET N-CHANNEL 60V 17A DPAK

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs27.4mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.1V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Max Power Dissipation18W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

Environmental

Operating Temperature-55°C~175°C(TJ)