NVD5863NLT4G

onsemi

NVD5863NLT4G

Datasheet

Analog & Power

MOSFET N-CH 60V 14.9A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.1mOhm @ 41A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3850 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C14.9A (Ta), 82A (Tc)
Max Power Dissipation3.1W (Ta), 96W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

Environmental

Operating Temperature-55°C~175°C(TJ)