NVD5117PLT4G

onsemi

NVD5117PLT4G

Analog & Power

MOSFET P-CH 60V 11A/61A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 29A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4800 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 61A (Tc)
Max Power Dissipation4.1W (Ta), 118W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101