NVB125N65S3

onsemi

NVB125N65S3

Datasheet

Analog & Power

SF3 650V EASY 125MOHM D2PAK AUTO

ActiveAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs125mOhm @ 12A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1940 pF @ 400 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
SeriesSuperFET® III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 590µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Max Power Dissipation181W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Supplier Device PackageTO-263 (D2PAK)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)