NTZD5110NT1G

onsemi

NTZD5110NT1G

Datasheet

Analog & Power

MOSFET 2N-CH 60V 0.294A SOT563

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.6Ohm @ 500mA, 10V
Base Product NumberNTZD5110
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds24.5pF @ 20V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C294mA
Power - Max250mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

Environmental

Operating Temperature-55°C ~ 150°C (TJ)