NTZD3155CT1G

onsemi

NTZD3155CT1G

Datasheet

Analog & Power

MOSFET N/P-CH 20V SOT563

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs550mOhm @ 540mA, 4.5V
Base Product NumberNTZD3155
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 16V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C540mA, 430mA
Power - Max250mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

Environmental

Operating Temperature-55°C ~ 150°C (TJ)