NTTFS6H888NTAG

onsemi

NTTFS6H888NTAG

Analog & Power

T8 80V U8FL

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 40 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 15µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C4.7A (Ta), 12A (Tc)
Max Power Dissipation2.9W (Ta), 18W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-WDFN (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)