NTTFS4H05NTAG

onsemi

NTTFS4H05NTAG

Datasheet

Analog & Power

MOSFET N-CH 25V 22.4A/94A 8WDFN

Obsolete8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.3mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1205 pF @ 12 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.1V @ 250µA

Electrical

Drain-to-Source Voltage25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C22.4A (Ta), 94A (Tc)
Max Power Dissipation2.66W (Ta), 46.3W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-WDFN (3.3x3.3)

Environmental

Operating Temperature150°C (TJ)