NTTFS1D2N02P1E

onsemi

NTTFS1D2N02P1E

Datasheet

Analog & Power

MOSFET N-CH 25V 23A/180A 8PQFN

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1mOhm @ 38A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds4040 pF @ 13 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)+16V, -12V
Vgs(th) (Max) @ Id2V @ 934µA

Electrical

Drain-to-Source Voltage25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 180A (Tc)
Max Power Dissipation820mW (Ta), 52W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Supplier Device Package8-PQFN (3.3x3.3)

Environmental

Operating Temperature-55°C~150°C(TJ)