NTTFS080N10GTAG

onsemi

NTTFS080N10GTAG

Datasheet

Analog & Power

100V MVSOA IN U8FL PACKAGE

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs72mOhm @ 4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds560.5 pF @ 50 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 22µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.1A (Ta), 16A (Tc)
Max Power Dissipation2.5W (Ta), 39W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
Supplier Device Package8-WDFN (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)