NTTFD022N10C

onsemi

NTTFD022N10C

Datasheet

Analog & Power

MOSFET 2N-CH 100V 6A/24A 12WQFN

Active12-PowerWQFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 7.8A, 10V
Base Product NumberNTTFD022
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds585pF @ 50V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 44µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C6A (Ta), 24A (Tc)
Power - Max1.7W (Ta), 26W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case12-PowerWQFN
Supplier Device Package12-WQFN (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)