NTTBC070NP10M5L

onsemi

NTTBC070NP10M5L

Datasheet

Analog & Power

MOSFET N/P-CH 100V 3.5A 8WDFN

Active8-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
Base Product NumberNTTBC070
ConfigurationN and P-Channel
Gate Charge (Qg) (Max) @ Vgs5.6nC @ 10V, 7.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds252pF @ 50V, 256pF @ 50V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 24µA, 4V @ 40µA

Electrical

Drain-to-Source Voltage100V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
Power - Max1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
Supplier Device Package8-WDFN (3x3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)