NTR5105PT1G

onsemi

NTR5105PT1G

Datasheet

Analog & Power

MOSFET P-CH 60V 196MA SOT23-3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5Ohm @ 100mA, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds30.3 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C196mA (Ta)
Max Power Dissipation347mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)