NTR4170NT1G

onsemi

NTR4170NT1G

Datasheet

Analog & Power

MOSFET N-CH 30V SOT23-3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 3.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.76 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds432 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.4V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Max Power Dissipation480mW (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)