NTPF360N65S3H

onsemi

NTPF360N65S3H

Datasheet

Analog & Power

POWER MOSFET, N-CHANNEL, SUPERFE

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs360mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds916 pF @ 400 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusActive
SeriesSuperFET® III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 700µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Tj)
Max Power Dissipation26W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP

Environmental

Operating Temperature-55°C~150°C(TJ)