NTP185N60S5H

onsemi

NTP185N60S5H

Datasheet

Analog & Power

MOSFET N-CH 600V 15A TO220-3

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs185mOhm @ 7.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 400 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusActive
SeriesSuperFET® V
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.3V @ 1.4mA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Max Power Dissipation116W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C~150°C(TJ)