NTP082N65S3F

onsemi

NTP082N65S3F

Datasheet

Analog & Power

MOSFET N-CH 650V 40A TO220-3

DiscontinuedTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs82mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3410 pF @ 400 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesFRFET®, SuperFET® II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 4mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Max Power Dissipation313W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)