NTNS4C69NTCG

onsemi

NTNS4C69NTCG

Analog & Power

MOSFET N-CH SMD

Obsolete3-XFDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs155mOhm @ 300mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds75 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.1V @ 10µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Max Power Dissipation178mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case3-XFDFN
Supplier Device PackageSOT-883 (XDFN3) (1x0.6)

Environmental

Operating Temperature-55°C~150°C(TJ)