NTMTSC1D6N10MCTXG

Name: NTMTSC1D6N10MCTXG
Brand: onsemi

Analog & Power

MOSFET N-CH 100V 35A/267A 8TDFNW

Active8-PowerTDFNAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	1.7mOhm @ 90A, 10V
Base Product Number	NTMTSC1
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	7630 pF @ 50 V
Manufacturer	onsemi
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 650µA

Drain-to-Source Voltage	100 V
Current - Continuous Drain (Id) @ 25°C	35A (Ta), 267A (Tc)
Max Power Dissipation	5.1W (Ta), 291W (Tc)

Operating Temperature	-55°C~175°C(TJ)