NTMTSC1D5N08MC

onsemi

NTMTSC1D5N08MC

Datasheet

Analog & Power

MOSFET N-CH 80V 33A/287A 8DFNW

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.56mOhm @ 80A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10400 pF @ 40 V
Manufactureronsemi
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
SeriesDual Cool™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 650µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C33A (Ta), 287A (Tc)
Max Power Dissipation3.3W (Ta), 250W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-TDFNW (8.3x8.4)

Environmental

Operating Temperature-55°C~150°C(TJ)