NTMTSC002N10MCTXG

onsemi

NTMTSC002N10MCTXG

Datasheet

Analog & Power

MOSFET N-CH 100V 45A/236A 8TDFNW

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2mOhm @ 90A, 10V
Base Product NumberNTMTSC002
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6305 pF @ 50 V
Manufactureronsemi
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 520µA

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C45A (Ta), 236A (Tc)
Max Power Dissipation9W (Ta), 255W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-TDFNW (8.3x8.4)

Environmental

Operating Temperature-55°C~175°C(TJ)