NTMTS1D6N10MCTXG

onsemi

NTMTS1D6N10MCTXG

Datasheet

Analog & Power

SINGLE N-CHANNEL POWER MOSFET 10

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.7mOhm @ 90A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7630 pF @ 50 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 650µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C36A (Ta), 273A (Tc)
Max Power Dissipation5W (Ta), 291W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-DFNW (8.3x8.4)

Environmental

Operating Temperature-55°C~175°C(TJ)