NTMTS0D7N06CTXG

onsemi

NTMTS0D7N06CTXG

Datasheet

Analog & Power

MOSFET N-CH 60V 60.5A/464A 8DFNW

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.72mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11535 pF @ 30 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C60.5A (Ta), 464A (Tc)
Max Power Dissipation5W (Ta), 294.6W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
Supplier Device Package8-DFNW (8.3x8.4)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)