NTMTS0D6N04CLTXG

onsemi

NTMTS0D6N04CLTXG

Datasheet

Analog & Power

MOSFET N-CH 40V 554.5A

Active8-PowerTDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.42mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs126 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds16013 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C554.5A (Tc)
Max Power Dissipation5W

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Supplier Device Package8-DFNW (8.3x8.4)

Environmental

Operating Temperature-55°C~175°C(TJ)