Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 50mOhm @ 25A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 325 V |
| Manufacturer | onsemi |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +22V, -8V |
| Vgs(th) (Max) @ Id | 4.3V @ 8mA |
| Drain-to-Source Voltage | 650 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Max Power Dissipation | 187W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 4-PowerTSFN |
| Supplier Device Package | 4-TDFN (8x8) |
| Operating Temperature | -55°C~175°C(TJ) |
|---|