NTMS4700NR2

onsemi

NTMS4700NR2

Analog & Power

MOSFET N-CH 30V 8.6A 8SOIC

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.2mOhm @ 13A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 24 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8.6A (Ta)
Max Power Dissipation860mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)