NTMJS0D9N03CGTWG

onsemi

NTMJS0D9N03CGTWG

Analog & Power

MOSFET N-CH 30V LFPAK8

ObsoleteSOT-1205, 8-LFPAK56Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs0.9mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs131.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9550 pF @ 15 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 200µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C50A (Ta), 315A (Tc)
Max Power Dissipation3.9W (Ta), 150W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-1205, 8-LFPAK56
Supplier Device Package8-LFPAK

Environmental

Operating Temperature-55°C~175°C(TJ)