NTMFSC4D2N10MC

onsemi

NTMFSC4D2N10MC

Datasheet

Analog & Power

MOSFET N-CH 100V 29.6A/116A 8DFN

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.3mOhm @ 44A, 10V
Base Product NumberNTMFSC4
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2856 pF @ 50 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C29.6A (Ta), 116A (Tc)
Max Power Dissipation7.9W (Ta), 122W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device Package8-DFN (5x6.15)

Environmental

Operating Temperature-55°C~175°C(TJ)